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 MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
PM450CLA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.8V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. * 3 450A, 600V Current-sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (Fo available from all arm devices) * Acoustic noise-less 37kW class inverter application * UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
172 11 6 12-M6 NUTS 14 500.5 22 28 162 500.5 22 28 500.5 22
6.5
Dimensions in mm
2
(24) 17 +1.0 -0.5 6
7.75
9.08
55
50 31.84
50 31.84 3.22 3-2.54 3.22 31.84 3-2.54
1100.5 123 137 150 99
13.5
5.5
20
3.22
94.5
3-2.54
13 16 17 14 15 18 21 3.75 8-5.5 MOUNTING HOLES 53.75
20 19 3-2.54
21 24 25 22 23 26 21 50
28 27 3-2.54
29 3233 30 31 34 21 53.75
36 35 3-2.54
1
2
3
4
5
6
(15.5)
8-3.5
12 17
12 17
12 17
12 17
12 17
12 17
(SCREWING DEPTH)
Terminal code
6-2.5 240.64
1. 2. 3. 4. 5. 6.
N 7. W P 8. W N 9. V P 10. V N 11. U P 12. U
13. 14. 15. 16. 17. 18.
VUPC UPFO UP VUP1 VUNC UNFO
19. 20. 21. 22. 23. 24.
UN VUN1 VVPC VPFO VP VVP1
LABEL
12
35.5
36.6
7
8
9
10
11
12
25. 26. 27. 28. 29. 30.
VVNC VNFO VN VVN1 VWPC WPFO
31. 32. 33. 34. 35. 36.
WP VWP1 VWNC WNFO WN VWN1
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
WN VWN1 WNFO WP VWP1 VN VVN1 VP VVP1 UN VUN1 UP VUP1
VWNC
VWPC
WPFO
VVNC
VNFO
VVPC
VPFO
VUNC
UNFO
VUPC
UPFO
1.5k
1.5k
1.5k
1.5k
1.5k
1.5k
Gnd
In
Fo
Vcc
Gnd
In
Fo
Vcc
Gnd
In
Fo
Vcc
Gnd
In
Fo
Vcc
Gnd
In
Fo
Vcc
Gnd
In
Fo
Vcc
Gnd
Si
Out
OT
Gnd
Si Out
OT
Gnd
Si
Out
OT
Gnd
Si Out
OT
Gnd
Si
Out
OT
Gnd
Si Out
OT
N
W
P
N
V
P
N
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 600 450 900 1041 -20 ~ +150 Unit V A A W C
(Note-1)
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC VUN1-VUNC, VVN1-VVNC, VWN1-VWNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC UNFO-VUNC, VNFO-VVNC, WNFO-VWNC Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO terminals Ratings 20 20 20 20 Unit V V V mA
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 400 500 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT (per 1 element) Inverter FWDi (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.12 0.19 0.014 Unit
C/W
(Note-1) Tc measurement point is just under the chip. If you use this value, Rth(f-a) should be measured just under the chips. Table 1: Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 26.5 23.9 85.5 70.5 VP IGBT FWDi 76.5 73.9 85.5 70.5 WP IGBT FWDi 126.5 123.9 85.5 70.5
7
(Unit : mm) UN IGBT FWDi 23.4 26.0 24.5 39.5
13
VN IGBT FWDi 73.4 76.0 24.5 39.5
WN IGBT FWDi 123.4 126.0 24.5 39.5
Name plate side
Bottom view
Y X
6
1
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 450A VCIN = 0V (Fig. 1) -IC = 450A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 450A Tj = 125C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.5 -- -- -- -- -- -- Limits Typ. 1.7 1.8 2.6 1.0 0.2 0.4 2.2 0.6 -- -- Max. 2.2 2.3 3.7 2.4 0.4 1.0 3.5 1.1 1 10 Unit V V
Switching Time
s
(Fig. 3, 4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Condition V*N1-V*NC V*P1-V*PC Min. -- -- 1.2 1.7 900 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 11 11 1.5 2.0 -- 0.2 145 125 12.0 12.5 -- 10 1.8 Max. 18 18 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC (Fig. 3,6) -20 Tj 125C, VD = 15V VD = 15V VD = 15V Detect Tj of IGBT chip -20 Tj 125C VD = 15V, VFO = 15V VD = 15V (Fig. 3,6) Trip level Reset level Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- -- Parameter Mounting torque Mounting torque Weight Main terminal Mounting part -- Condition screw : M6 screw : M5 Min. 3.5 2.5 -- Limits Typ. 4.0 3.0 1250 Max. 4.5 3.5 -- Unit N*m N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC VUN1-VUNC, VVN1-VVNC, VWN1-VWNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN-VUNC, VN-VVNC, WN-VWNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 400 15 1.5 0.8 9.0 20 3.0 Unit V V
V kHz s
(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
VCIN
(0V)
IN Fo
V
Ic
VCIN
(15V)
IN Fo
V
-Ic
VD (all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
VCIN (15V) VCIN Signal input (Upper Arm) Signal input (Lower Arm)
Fo Fo
trr Irr
CS
VCE Ic 90%
Vcc 90%
b) Upper Arm Switching
VCIN Signal input (Upper Arm)
VD (all)
Fo
Ic
10%
10% tc(on)
10% tc(off)
10%
VCIN
CS
Vcc
td(on)
tr
td(off)
tf
VCIN (15V)
Signal input (Lower Arm)
Fo
(ton= td(on) + tr) VD (all) Ic
(toff= td(off) + tf)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN Short Circuit Current
P, (U,V,W) A
IN Fo
Constant Current SC
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V,W, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
20k
10
VUP1 UPFO UP VUPC
1.5k
Vcc Fo In
OT OUT Si
P
VD
IF
+ -
U
GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si P OT OUT Si N
0.1
VUN1 UNFO
1.5k
VD
UN VUNC VVP1 VPFO
1.5k
VD
VP VVPC VVN1 VNFO
1.5k
In GND GND Vcc Fo OT OUT Si N V
M
VD
VN VVNC VWP1 WPFO
1.5k
In GND GND Vcc Fo OT OUT Si
P
VD
WP VWPC VWN1 WNFO
1.5k
In GND GND Vcc Fo OT OUT Si N W
VD
WN VWNC
In GND GND
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * * *
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
500
15V 13V
2.5
VD = 15V
400
VD = 17V
2
300
1.5
200
1
100
0.5 Tj = 25C Tj = 125C 0 0 100 200 300 400 500
0
0
0.5
1
1.5
2
2.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2.5
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 4 3 2
2
VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
1.5
100
7 5 4 3 2
1
tc(off) tc(on)
0.5
IC = 450A Tj = 25C Tj = 125C 13 14 15 16 17 18
0 12
10-1 1 10
2
3 4 5 7 102
2
3 4 5 7 103
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)
SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
SWITCHING TIME ton, toff (s)
7 5 4 3 2
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2
ESW(off)
toff ton VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load 3 4 5 7 102 2 3 4 5 7 103
101
7 5 4 3 2
ESW(on) ESW(on) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 103
100
7 5 4 3 2
100
7 5 4 3 2
ESW(off) ESW(off) ESW(on)
2 3 4 5 7 102
10-1 1 10
2
10-1 101
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Jul. 2005
MITSUBISHI
PM450CLA060
FLAT-BASE TYPE INSULATED PACKAGE
COLLECTOR RECOVERY CURRENT -IC (A)
DIODE FORWARD CHARACTERISTICS (TYPICAL)
7 5 4 3 2
REVERSE RECOVERY TIME trr (s)
103
VD = 15V
102
7 5 4 3 2
7 5 4 3 2
7 5 4 3 2
10-1
7 5 4 3 2
trr
101
7 5 4 3 2
Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3
101
10-2 101
2
3 4 5 7 102
2
3 4 5 7 103
100
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT -IC (A)
ID VS. fc CHARACTERISTICS (TYPICAL) 60
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) CIRCUIT CURRENT ID (mA)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 100
7 5 3 2
P-side or N-side VD = 15V 50 Tj = 25C 40 30 20 10 0
10-1
7 5 3 2
10-2
0
5
10
15
20
25
Per unit base = Rth(j - c)Q = 0.12C/W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
7 5 3 2
10-1
7 5 3 2
10-2
Per unit base = Rth(j - c)F = 0.19C/W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2
REVERSE RECOVERY CURRENT lrr (A)
DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 103 7 VCC = 300V 7 5 VD = 15V 5 4 4 Tj = 25C 3 3 2 2 Tj = 125C Irr 100 Inductive load 102
Jul. 2005


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